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Advance Technical Information
TrenchT2 TM HiPerFET TM
Power MOSFET
IXFH340N075T2
IXFT340N075T2
V DSS
I D25
R DS(on)
= 75V
= 340A
≤ 3.2m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 175 ° C
Maximum Ratings
75
V
G
D
S
D (TAB)
V DGR
T J = 25 ° C to 175 ° C, R GS = 1M Ω
75
V
V GSM
I D25
Transient
T C = 25 ° C (Chip Capability)
± 20
340
V
A
TO-268 (IXFT)
I LRMS
I DM
I A
E AS
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
160
850
170
960
A
A
A
mJ
G
S
D (TAB)
P D
T J
T C = 25 ° C
935
-55 ... +175
W
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T JM
175
° C
T stg
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
-55 ... +175
300
260
1.13 / 10
6
4
° C
° C
° C
Nm/lb.in.
g
g
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Diode
Low R DS(on)
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
75
V
Advantages
Easy to Mount
Space Savings
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 3mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
2.0
4.0
± 200
25
V
nA
μ A
High Power Density
Applications
T J = 150 ° C
1.5 mA
DC/DC Converters and Off-line UPS
R DS(on)
V GS = 10V, I D = 100A, Note 1
3.2 m Ω
Primary- Side Switch
High Current Switching Applications
? 2009 IXYS CORPORATION, All Rights Reserved
DS100194(9/09)
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